辐照后4H-SiC带电粒子探测器的特性研究

Study of the characteristics of an irradiated 4H-SiC charge particle detector

碳化硅材料因其禁带宽度大、晶体原子离位能高等物理特性,被视为制作耐高温、抗辐射器件极具代表性的宽带隙半导体材料。为观察辐照对4H-SiC肖特基二极管带电粒子探测器的电学特性及对α粒子响应的能量分辨率的影响。利用60Co源的γ射线对4H-SiC肖特基二极管探测器进行辐照实验。经过总剂量为1 000 kGy的γ射线辐照后,探测器的正向电流相较于辐照前减小了三个数量级;反向电流值在0～120 V偏压下没有明显变化,当反向偏压高于120 V时,反向电流值变化明显。同时,辐照前后对α粒子的能量分辨率没有明显变化。

[Background] Silicon carbide is considered as a representative wide band gap semiconductor material for high temperature and radiation resistance devices due to its physical properties of wide band gap and high threshold displacement energy.[Purpose] This study aims to investigate the effects of irradiation on the electrical properties of the 4H-SiC Schottky diode detector and the energy resolution of the α-particle response.[Methods] The 4H-SiC Schottky diode detector was irradiated with 60Co source gamma-rays. The forward current and reverse bias voltage of the detector were observed.[Results & Conlusion] After γ- rays irradiation with total absorbed dose of 1 000 kGy, the forward current of the detector decreases by three orders of magnitude compared with that before irradiation. The reverse current value does not change at 0~120 V bias voltage. When the reverse bias voltage is higher than 120 V, the reverse current value changes obviously. At the same time, there is no significant change in the energy resolution of α-particle before and after irradiation.