大尺寸Ga/Sc共掺ZnO晶体的水热法生长及光的吸收特性

Hydrothermal growth and light absorption of large size Ga/Sc Co-doped ZnO crystals

文章报道了水热法生长Ga/Sc共掺ZnO晶体的结果。实验以ZnO陶瓷烧结块为培养料,以4mol/LKOH+1mol/L LiOH+5mlH2O2作为矿化剂,溶液中加入定量的Ga2O3和Sc2O3粉末,在尺寸为Φ70×1100mm高压釜中,在溶解温度T=380℃~400℃,结晶温度T=360℃~380℃的条件下,采用温差水热法生长出了尺寸为50×35×5.6(c轴方向)mm3的Ga/Sc共掺ZnO单晶体。采用ICP-MS测试了晶体中Ga和Sc元素的含量。利用分光光度计测试了晶体的吸收率,从400nm波长开始,随着波长的增大,Ga/Sc共掺ZnO晶体的吸收率比纯ZnO晶体高。比较了不同温差条件下c轴方向的生长速度,确定了合适的水热法晶体生长的温差条件。

The growth of Ga/Sc Co-doped ZnO crystals with hydrothermal method was reported in this paper.The Ga/Sc Co-doped ZnO single crystals with the size of 50×35×5.6(c-axis)mm 3 were grown by temperature difference hydrothermal method in the size ofΦ70×1100mm autoclave,under the conditions of dissolution temperature T=380~400℃and crystallization temperature T=360~380℃with ZnO ceramic caking as nutrients,4mol/L KOH+1mol/L LiOH+5ml H 2O 2 as mineralizer,and the solution added a quantitative Ga 2O 3 and Sc 2O 3 powder.The contents of Ga and Sc elements in the crystals were measured by ICP-MS.The absorptivity of the crystals was measured by spectrophotometer.From the wavelength of 400nm,the absorption rate of Ga/Sc Co-doped ZnO crystals is higher than that of pure ZnO crystals as the wavelength increases.The growth rates of c-axis under different temperature difference conditions were compared,and the suitable temperature difference condition for hydrothermal crystals growth was determined.