化学气相沉积法制备吸波型SiCN陶瓷的研究进展

Research progress on SiCN ceramic prepared at low temperature by chemical vapor deposition

化学气相沉积法(chemical vapor deposition,CVD)是近几十年发展起来的制备无机材料的新技术,具有制备温度低、所得材料均匀致密、可实现近尺寸成型等优点,是制备功能材料的常用方法之一。本文综述了几种常见的CVD 方法,如常压化学气相沉积(atmospheric pressure chemical vapor deposition,APCVD)、低压化学气相沉积(lowpressure chemical vapor deposition, LPCVD)、等离子体增强化学气相沉积( plasma enhanced chemical vapordeposition,PECVD)以及激光辅助化学气相沉积(laser assisted chemical vapor deposition,LACVD);重点阐述了采用LPCVD 在较低温度下制备SiCN 陶瓷吸波剂的工艺参数,提出了LPCVD 是制备新型吸波陶瓷的主要方法。

Chemical vapor deposition (CVD) is a new technology for preparing inorganic materials which possess some advantages, such as lower preparation temperature, uniform and compact microstructure, and near-size molding, so it is one of the common methods to prepare functional ceramics. In the paper, several common chemical vapor deposition methods like atmospheric chemical vapor deposition, low-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition and laser-assisted chemical vapor deposition are reviewed, because the microstructure and performance of functional ceramics are greatly influenced by their fabrication methods. In addition, the deposition parameters of Si-C-N absorbing ceramics which are deposited at lower temperature by low-pressure chemical vapor deposition are optimized. It is proposed that low-pressure chemical vapor deposition is the main method for preparing the advanced EMW absorbing ceramics.