新型研磨垫对单晶氧化镓研磨的实验研究

Experimental research on lapping of single crystal gallium oxide with new type lapping pad

为抑制氧化镓晶片在研磨过程中的解理现象,通过NAKAMURA的方法,重新设计、研制一种黏弹性固着磨料新型研磨垫对氧化镓晶片进行研磨实验研究,对比分析其与传统铸铁研磨盘对单晶氧化镓研磨的材料去除率和表面质量的影响规律,结果表明:在同一研磨参数下,采用铸铁盘研磨时,晶片材料去除率较高,为358nm/min,研磨后晶片表面粗糙度Ra由初始的269nm降低到117nm,降幅仅为56.5%;而采用新型研磨垫研磨时,其材料去除率虽较低,为263nm/min,但研磨后晶片表面粗糙度Ra却降低至58nm,降幅达到78.4%,晶片表面质量得到明显提高,为后续氧化镓晶片的抛光奠定了良好的基础,因而新型研磨垫更适合对氧化镓进行研磨。同时,也为氧化镓晶片研磨提供了参考依据。

In order to restrain the cleavage phenomenon of gallium oxide wafer in the lapping process,redesigns and develops a new type of viscoelastic fixing abrasive lapping pad to grind the gallium oxide wafer by NAKAMURA method,and compares it with the traditional cast iron lapping disc on the influence of single crystal gallium oxide material removal rate and surface quality.The result indicates that:under the same lapping parameters,the material removal rate is higher by using the cast iron plate lapping,which is 358 nm/min,but the surface roughness of the wafer reduces from the initial 269 nm to 117 nm,a decline of only 56.5 %;while using a new lapping pad lapping,the material removal rate is low by only 263 nm/min and the surface roughness of the wafer reduces to 58 nm,a decline of 78.4 %.The wafer surface quality has been significantly improved,which settles a good foundation for the subsequent gallium oxide wafer polishing.So the new type of lapping pad is more suitable for lapping gallium oxide.At the same time,it also provides a reference for gallium oxide wafer lapping.