应变Si NMOS器件总剂量辐射对单粒子效应的影响

Single Event Effect Under Total Dose Radiation in Strained Si NMOS Devices

针对应变SiNMOS器件总剂量辐射对单粒子效应的影响机制,采用计算机TCAD仿真进行研究。通过对比实验结果,构建50nm应变SiNMOS器件的TCAD仿真模型,并使用该模型研究处于截至态(Vds=1V)的NMOS器件在总剂量条件下的单粒子效应。实验结果表明,总剂量辐照引入的氧化层陷阱正电荷使得体区电势升高,加剧了NMOS器件的单粒子效应。在2kGy总剂量辐照下,漏极瞬态电流增加4.88%,而漏极收集电荷增量高达29.15%,表明总剂量辐射对单粒子效应的影响主要体现在漏极收集电荷的大幅增加方面。

The effect of the total dose radiation on the single event effects of strained Si NMOS devices was investigated by using TCAD simulation. The TCAD simulation model of the 50 nm strained Si NMOS device was constructed by the experimental results comparison. The single event effect of NMOS devices under off-state ( V ds =1 V) at the total dose was simulated by the proposed correct model. The experimental results showed that the positive charge of the oxide trap introduced by the total dose radiation increased the body potential, which further exacerbated single event transients in NMOS devices. The drain transient current increased by 4.88% while the drain charge increased by 29.15% at a total dose of 2 KGy, which revealed that the effect of total dose radiation on the single event effect was mainly reflected in the significant increase in the drain charge collection.