闪存等级调制移位错误的多重置换纠错码构造

Construction of Multi-permutation Codes for Correcting Translocation Errors in Rank Modulated Flash Memory

基于多重置换群理论的纠错码,允许对多个闪存单元采用相同等级的电荷进行等级调制,从而降低闪存设备电荷取值范围。与置换码相比,多重置换码能够更为有效地抵抗由于电荷相差很小而导致的存储错误,从而提高闪存设备的信息存储率。为了纠正闪存设备由于电荷泄露或增加所导致的单个移位错误,利用交织技术和多重置换映射方法,提出了一种基于切比雪夫距离度量的多重置换码构造,给出了相应的译码方法,分析了渐进码率,实例验证了码构造及其译码方法。

Error-correcting codes based on multi-permutation groups allow multiple cells to be rank modulated with the same charge levels,which helps to reduce the range of charge levels for flash memory.Compared with permutation codes,multi-permutation codes can more effectively resist the storage errors caused by small differences between cell charges,so as to improve the information storage rates of flash memory.To correct a single translocation error caused by charge leakage or cell over-injection in flash memory devices,a class of multi-permutation codes is constructed under the Chebyshev distance by using interleaving and mapping techniques for multi-permutations.The decoding method is presented in the proof of the proposed construction,and the asymptotic code rates are analyzed.The code construction and the decoding method are validated with examples.