简易溶液法合成CsPbBr3的光探测性能研究

Simple Solution Method Synthesis of CsPbBr3 for the Research of Photodetection Performance

设计并实现了一种新颖高效的制备CsPbBr3纳米材料的实验方法 .首先通过一种简单的溶液法获得CsPbBr3,并采用扫描电子显微镜(SEM),X射线衍射图谱(XRD)对其形貌和结构进行了表征.将其作为光敏材料,对其进行光探测性能测试发现,CsPbBr3具有较好的光响应性以及较大的光电流,其响应上升时间和响应下降时间分别是1.325s和0.754s,光电流在5V偏压,0.9mW的光强下是14.11μA/cm^2.除此之外,可以发现I-V曲线是线性的,而且无论是在有光还是无光的情况下,电流都是随着偏压增大而增大,有光时的电流大于无光时的电流.因为光照时,CsPbBr3材料的内部会产生大量的光生电子空穴对,从而会增加材料中的自由电子的数目,最终导致光电流变大.光照变强时,其电流大于弱的光照强度,这是因为光照强度变强时,照射到材料表面上和接收的光能量就会变得更加的多,从而导致了电流的增加.这项工作表明,所制备出的CsPbBr3光探测器具有良好的光电特性,并为将来开发其他含有CsPbBr3材料的实际应用提供了一种思路和更加积极的证明.

This paper designs and implements a novel and efficient experimental method for preparing CsPbBr3 nanomaterials.The CsPbBr3 was obtained via a simple solution method,and its morphology and structure were characterized by scanning electron microscopy(SEM)and X-ray diffraction(XRD).Using it as a photosensitive material,and its photodetection performance was tested.It was found that CsPbBr3 has good light response and large photocurrent.The response rise time and response fall time is 1.325 s and 0.754 s,respectively.The photocurrent is 14.11μA/cm^2 at the bias potential of 5 Vand the power density of 0.9 mW.In addition,it can be found that the I-Vcurve is linear,the current increases with the increase of the bias potential in the presence or absence of light,and the current in the presence of light is greater than the absence of light.Because of the light,the inside of the CsPbBr3 material generates a large number of photogenerated electron-hole pairs,which increases the number of free electrons in the material,and eventually causes the photocurrent to become large.Moreover,when the illumination becomes strong,the current is also greater than the weak illumination intensity.This is because when the illumination intensity becomes stronger,the light energy that is irradiated onto the surface of the material and received becomes much more,resulting in an increase in current.This work shows that the prepared CsPbBr3 photodetector has good optoelectronic characteristics and provides a new idea and more positive proof for the practical application of other CsPbBr3 materials in the future.