单晶硅太阳电池黑角问题的研究

Research on Black Edge of Mono-crystalline Silicon Solar Cells

用电致发光(EL)技术检测P型常规单晶硅太阳电池,发现角部发黑问题。研究其与电池制造工艺或单晶硅材料的相关性,测试正常和黑角电池片的电性能参数发现黑角电池光电转换效率低于19.90%。经腐蚀剥离电池分析基底单晶硅材料,发现黑角处材料的少子寿命比中心位置处低约50μs以上。用Schimmel A择优腐蚀液剥离黑角电池,在黑角位置的硅材料明显出现位错缺陷,且缺陷数量高于中心区域。经多项实验检测分析,初步得出EL测试出现黑角边问题的单晶硅电池与基底硅材料的原生缺陷有关。

The P-type mono-crystalline silicon solar cells have been found a problem of black edge through EL testing. The solar cells manufacturing process or silicon material have been investigated carefully . The black edge solar cells efficiency of photoelectric conversion was lower 19.90% than normal cells. The lifetime of black edge area material was lower about 50 μs than centre area material by analysing the base silicon material with stripping. Using Schimmel A preferential etching method on black angle solar cells,the clear dislocation defects were located in the black edge area silicon material. And the number of defects of black edge silicon material were much higher than central area. So the black edge solar cells by EL testing might be related to the intrinsic defects of base silicon materials.