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A Simple Strategy for Fabrication of In(OH)3/ZnIn2S4 Heterostructure as Visible-light-driven Photocatalyst for Selective Oxidation

A Simple Strategy for Fabrication of In(OH)3/ZnIn2S4 Heterostructure as Visible-light-driven Photocatalyst for Selective Oxidation
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摘要 The cubic In(OH)3/ZnIn2S4 heterostructures were successfully synthesized via a simple strategy of post-treatment of cubic ZnIn2S4(C-ZIS), and their structures and properties were characterized by X-ray diffraction(XRD), UV-vis diffuse reflectance spectra(DRS), field emission scanning electron microscopy(FESEM) and transmission electron microscopy(TEM). According to the results, the tofu-like In(OH)3 semiconductor as a new crystal phase appeared in the matrix of C-ZIS and formed a In(OH)3/ZnIn2S4 heterostructure. Compared with pure C-ZIS, the heterostructure exhibits higher photocatalytic activity towards selective oxidation of benzyl alcohol under visible light. The In(OH)3/ZnIn2S4 heterostructure manifests the best and the highest photocatalytic performance via 18 h post-treatment, which achieved nearly 100% selectivity, 35.5%conversion and 34.5% yield. This is ascribed to the formation of In(OH)3/ZnIn2S4 heterostructure to promote the transfer of photogenerated electron-hole pairs and thus efficiently inhibits their recombination, leading to the longer lifetime of photo-induced carriers. Furthermore, a possible photocatalytic mechanism is proposed and discussed. Our current work could boost more interest in researching the semiconductor materials of ternary chalcogenides and enlarging the applications based on cubic ZnIn2S4 heterostructure as visible-light-driven photocatalyst. The cubic In(OH)3/ZnIn2S4 heterostructures were successfully synthesized via a simple strategy of post-treatment of cubic ZnIn2S4(C-ZIS), and their structures and properties were characterized by X-ray diffraction(XRD), UV-vis diffuse reflectance spectra(DRS), field emission scanning electron microscopy(FESEM) and transmission electron microscopy(TEM). According to the results, the tofu-like In(OH)3 semiconductor as a new crystal phase appeared in the matrix of C-ZIS and formed a In(OH)3/ZnIn2S4 heterostructure. Compared with pure C-ZIS, the heterostructure exhibits higher photocatalytic activity towards selective oxidation of benzyl alcohol under visible light. The In(OH)3/ZnIn2S4 heterostructure manifests the best and the highest photocatalytic performance via 18 h post-treatment, which achieved nearly 100% selectivity, 35.5%conversion and 34.5% yield. This is ascribed to the formation of In(OH)3/ZnIn2S4 heterostructure to promote the transfer of photogenerated electron-hole pairs and thus efficiently inhibits their recombination, leading to the longer lifetime of photo-induced carriers. Furthermore, a possible photocatalytic mechanism is proposed and discussed. Our current work could boost more interest in researching the semiconductor materials of ternary chalcogenides and enlarging the applications based on cubic ZnIn2S4 heterostructure as visible-light-driven photocatalyst.
作者 陈志鑫 CHEN Zhi-Xin
出处 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2019年第5期825-836,672,共13页 结构化学(英文)
基金 supported by the Key Projects of Youth Natural Fund in Fujian Universities(JZ160414) the Natural Science Foundation of Fujian Province(2019J01247)
关键词 ZnIn2S4 In(OH)3 HETEROSTRUCTURE POST-TREATMENT SELECTIVE OXIDATION ZnIn2S4 In(OH)3 heterostructure post-treatment selective oxidation
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