摘要
采用分子束外延制备了PbSe与MoSe2薄膜,使用Raman光谱和XRD衍射谱进行表征;并研制出PbSe/MoSe2异质结光敏二极管,研究了其光电响应特性。使用1300nm红外光源照射,在零偏压和-5V偏压加载下,所研制异质结光敏二极管的探测率分别为5×10^9cm·Hz^1/2·W^-1和2.9×10^11cm·Hz^1/2·W^-1,显示出优异的光电响应特性。尤其在负偏压工作模式下,由于器件处于关断状态,具有更低的暗电流,因此,具有更高的光/暗电流比和更加优异的综合性能。
The thin films of PbSe and MoSe2 were prepared by molecular beam epitaxy (MBE) and characterized by X-ray diffraction (XRD) and Raman spectra. PbSe/MoSe2 heterojunction photodiodes were fabricated, and the photoelectric response characteristics were measured. Under the 1300 nm infrared radiation, detectivity of the heterojunction photodiode can reach 5×10^9 cm Hz^1/2 W^-1and2.9×10^11cm Hz^1/2 W^-1 under zero-bias and -5V bias respectively. The photodiode demonstrates excellent photoelectric characteristics. Especially, the device shows higher photo/ dark current ratio and superior performance due to the lower dark current resulting from the OFF-state under the negative bias.
作者
范旭东
代天军
潘棋
刘兴钊
FAN Xudong;DAI Tianjun;PAN Qi;LIU Xingzhao(State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2019年第6期86-89,共4页
Electronic Components And Materials
基金
国家自然科学基金(61875029)
