级联结构氮化镓功率器件及其在无线电能传输系统中的应用

Cascode GaN Power Device and Its Application in Wireless Power Transmission System

为了进一步提升电能转换效率,介绍了一款基于650 V氮化镓高电子迁移率晶体管GaN HEMT(gallium nitride high electron mobility transistor)的共栅共源级联(cascode)结构开关管及其在无线电能传输方面的应用。在GaN HEMT器件设计方面,通过仿真讨论了器件的场板设计对电容和电场的影响。所制造的cascode器件在650 V时漏电约为2 μA,在源漏电压400 V时输入电容Ciss、输出电容Coss和反向传输电容Crss分别为1 500 pF、32 pF和12 pF,动态导通电阻升高约16%。基于该款cascode器件设计并展示了一款240~320 kHz、满载功率1 kW的无线充电样机,在200~1 000 W负载范围内效率明显高于Si器件,最高效率超过95%。

To achieve a higher power conversion efficiency, a cascode structure based on 650 V gallium nitride high electron mobility transistor(GaN HEMT) was introduced, together with its applications in wireless power transmission. From the aspect of GaN HEMT design, the effects of field plate design on capacitance and electric field were discussed through simulations. The fabricated cascode device had a leakage current of 2 μA at drain-source voltage of 650 V. At 400 V, the input capacitance Ciss, the output capacitance Coss and the reverse transfer capacitance Crss were 1 500 pF, 32 pF and 12 pF, respectively, and the dynamic on-resistance increased by about 16%. Based on the design of this cascode device, a wireless charging prototype with operation frequency of 240~320 kHz and full-load power of 1 kW was designed and presented. Compared with the equivalent Si device, its efficiency was obviously higher within the load range of 200~1 000 W, with the peak efficiency higher than 95%.