蓝宝石磁流变化学机械抛光工艺研究

Study on Magnetorheological Chemico-Mechanical Polishing Technique for Sapphire

针对超光滑平面蓝宝石衬底片存在亚表层损伤的问题,文中利用磁流变抛光技术进行蓝宝石衬底片抛光以满足现有生产需要,研究了磁流变抛光中抛光压力、抛光盘转速、工件盘转速及抛光液温度等工艺参数对C向蓝宝石衬底片表面粗糙度和去除率的影响。采用正交实验方法获得了一组最佳工艺参数为:抛光压力为25kg,抛光盘转速为40r·min^-1,工件盘转速为20r·min^-1,抛光液温度为38℃。研究结果表明:蓝宝石抛光后最优表面粗糙度Ra为0.31nm,去除率达到2.68μm·h^-1。

For the sub surface damage of ultra smooth planar sapphire substrates,the paper presents a magnetorheological finishing (MRF) technique for polishing sapphire substrates.Parameters,which affect surface roughness and removal rate of C Directed sapphire substrates such as polishing pressure,speed of polishing disk,speed of work piece disk and temperature of polishing fluid in Magnetorheological finishing,are studied.By means of an orthogonal experiment,a set of optimum technological parameters are obtained:polishing pressure 25 kg,polishing disc speed 40 r·min^-1 ,work piece disc speed 20 r·min^-1 ,polishing liquid temperature 38 ℃.The results show that the optimal surface roughness and the removal rate of the polished sapphire are R a 0.31 nm and 2.68 μm·h^-1 ,respectively.