籽晶偏向对高纯半绝缘4H-SiC晶体影响的研究

Research into the Influencing Factor of Seed on High Purity 4H-SiC Crystal

采用PVT法得到高纯4H-SiC体单晶。研究了0°、1°、4°晶体对晶体台阶流、晶体结晶质量、晶体缺陷、晶体电学性能的影响;晶体台阶流采用奥林巴斯显微镜进行表征,晶体缺陷采用莱卡体系显微镜进行表征,晶体结晶质量采用高分辨XRD进行表征,晶体电学性能采用非接触电阻率测试仪进行表征。实验结果表明:4°籽晶生长的晶体缺陷最少,1°与4°籽晶生长的晶体结晶质量相当,0°籽晶生长的晶体电学性能最均匀。

High purity 4H-SiC single crystals grown by physical vapor transport were investigated.This paper studied the effects of 0°seed,1°seed and 4°seed on crystal defect,crystal quality,electrical properties.The step flow characterized by Olympus microscope,crystal defect characterized by Leica microscope,crystal quality characterized by high resolution XRD,electrical properties characterized by non-contact electrical resistivity meter.Experiments indicated that 4H-SiC single crystals grown by 4°seed had minimal defects.4H-SiC single crystals grown by 1°seed and 4°seed had similar crystallization quality.4H-SiC single crystals grown by 0°seed had the most uniform resistivity.