硅晶片激光标识工艺参数的研究

Research on Process Parameters of Silicon Wafer Laser Marking

介绍了应用于硅晶片激光标识的激光打标系统结构,并以光纤振镜式激光打标机为例,探索了不同打标工艺参数的选择对晶片激光标识效果的影响。采用单因素实验法分别研究了不同激光打标功率、打标速度和打标频率对硅片打标效果的影响,并分析了其影响其打标效果的原理。通过目检和金相显微镜对激光标识进行观察,确定了最佳的打标工艺,最终得到了优化的打标工艺即采用激光额定功率的45%,频率为25kHz,打标速度为150mm/s,可得到标识清楚、深浅一致、不损伤晶片特性的激光标识。

This paper introduces the structure of the laser marking system applied to the laser marking of silicon wafers.Taking the fiber galvanometer laser marking machine as an example,the influence of the selection of different marking process parameters on the laser marking effect of the wafer is explored.The effects of different laser marking power,marking speed and marking frequency on the marking effect of silicon wafers were studied by single factor experiment method,and the principle of affecting the marking effect was analyzed.The laser marking was observed by visual inspection and metallographic microscope to determine the best marking process.Finally,the optimized marking process was achieved with a laser power of 45%,a frequency of 25 kHz,and a marking speed of 150mm/s.By using the optimized marking process parameters,a laser marking which is clear,uniformity,and no damage to the wafer characteristics is obtained.