中束流离子注入的束流强度改进研究

Study on Improvement of Beam Current in Medium Current Implantation

由于对离子注入剂量的测量大多为破坏性测量,无法在注入工艺后及时检测注入的准确性,一直是离子注入技术面临的难题。以NISSIN exceed 2000AH中束流离子注入机为平台,着重研究束流强度增强后对晶圆的电学性能带来的影响,及其实际应用。研究通过线下测试片进行实验,验证了束流强度对晶圆实际注入剂量和均匀度的影响。在不改变设定注入剂量的情况下,加大束流强度,亦会使晶圆的实际注入剂量偏多,当束流强度增加100%时,有可能造成实际注入剂量1.5%甚至2%以上的偏差。而当扫描次数小于5次时,注入的均匀度亦会有可能产生偏差。

Because ion implantation measurements are mostly destructive,and the accuracy of injection cannot be detected after the injection process,it is usually a difficult problem for ion injection technology.In this paper,NISSIN exceed 2000 AH ion implanter was used as a platform.Focus on the impact of beam intensity enhancement on the electrical performance of the wafer,and its practical application.In this study,the effect of beam intensity on the actual injection and uniformity of the wafers were verified primarily by experiments.Increasing the beam intensity also can make the more actual injection dosage without changing injection dosage.When the beam intensity was increased by 100%,1.5%or more than 2%deviation of the actual injection were resulted.But when the scanning frequency was less than 5 times,the deviation of injection uniformity may also be generated.