摘要
阐述了高纯半绝缘4H-SiC单晶的研究历史,展望了未来高纯半绝缘4H-SiC衬底制备方法及SiC市场的发展方向,分别讨论了籽晶、生长压强和温度场分布3种因素对于SiC单晶生长的影响,并提出了改进方法。
The research history of high-purity semi-insulating 4H-SiC single crystals is described.The preparation methods of high purity semi-insulating 4H-SiC substrates and the development direction of SiC market in the future are prospected.The effects of seed crystal,growth pressure and temperature distribution on the growth of SiC single crystals are discussed,and the improvement methods are proposed.
作者
范云
FAN Yun(The 2nd Research Institute of China Electronics Technology Group Corporation,Taiyuan 030024 China)
出处
《科技创新与生产力》
2019年第5期69-72,共4页
Sci-tech Innovation and Productivity
关键词
半导体材料
高纯半绝缘
4H-SiC单晶
单晶生长
semiconductor materials
high-purity semi-insulating
4H-SiC single crystal
single crystal growth
