二次静电放电仿真与实验研究

Secondary electrostatic discharge simulation and experimental research

二次静电放电(secondary electrostatic discharge,SESD)是一种由一次静电放电引起的发生在仪器内部微小缝隙间的击穿放电现象,可对晶体管等很多元件造成破坏.文章首先搭建由静电放电模拟电路、二次放电模拟电路和电流靶电路组成的电路级仿真模型,初步探索SESD的波形,并与初始模型进行对比分析,验证已知的理论.其次基于实验研究与数据分析的方法,总结二次放电波形特点、峰值特性和时延特性.研究表明:二次放电电流峰值大于一次放电电流峰值,且受放电电压、放电时延等参数影响;二次放电的时延呈正态分布.这一研究结果符合并验证了目前对二次放电微观过程研究所得出的相关理论.

Secondary electrostatic discharge(SESD) is an electrostatic discharge phenomenon that occurs between tiny gaps in an electronic device and has a peak current of several tens of amperes, which can cause fatal damage to many components such as transistors. The circuit-level simulation model composed of electrostatic discharge (ESD) simulation circuit, secondary discharge simulation circuit and current target circuit is used to study the secondary discharge process and parameter such as discharge waveform. The waveform of the secondary electrostatic discharge is initially explored and compared with the initial model to verify the known theory. Secondly, based on the methods of experimental research and data analysis, the characteristics, peak characteristics and time delay characteristics of the secondary discharge waveform are summarized. It is found that the peak current of the secondary discharge is larger than the first discharge current, and the time delay of the secondary discharge is normally distributed. The results of this study are consistent with and validated the current theories of microscopic process in SESD.