基于增强型GaN HEMT的半桥开关电路设计与测试

Design and Test of Half-bridge Switching Circuit Based on Enhanced-mode GaN HEMT

为了进一步提高现有功率变换系统的开关频率,采用增强型GaNHEMT器件设计出适用于高速开关控制的半桥开关电路。该半桥开关电路采用新型栅驱动电路,实现增强型GaNHEMT器件的高速控制,进而实现开关速度的提升。将该半桥开关电路用于一种48V转12V的高效DC/DC电源变换系统中,测试结果表明该半桥开关电路的开关频率超过600KHz,半桥驱动电流为10A,验证了所提出驱动方法的有效性。

In order to improve the switching frequency of the current power conversion system, a half bridge circuit for high-speed switching control is designed through an enhanced-mode GaN HEMT device. The circuit of his half bridge switch adopted a new gate driving circuit realizes the high-speed control of the enhanced-mode GaN HEMT device, so as to promote the speed of the switch. The switching frequency of this half-bridge switch circuit could reach over 600KHz, and the half bridge driving current is 10A, which verifies the effectiveness of the proposed driving method.