掺锡In2O3薄膜的晶粒生长及其微观结构性质研究

Grain growth and microstructural properties of tin doped In2O3 thin films

以氧化锡(SnO2)掺杂的氧化铟(In2O3)陶瓷靶作为溅射源材料,利用射频磁控溅射工艺在普通玻璃基底上沉积了掺锡In2O3(In2O3:Sn)薄膜样品,通过XPS、XRD和SEM等表征手段,研究了基底温度对薄膜晶粒生长和微观结构的影响.结果表明,所有In2O3:Sn样品均为多晶薄膜并具有体心立方铁锰矿晶体结构,基底温度对晶粒生长特性和微观结构性能具有明显的影响.基底温度升高时,薄膜沿(222)晶面的织构系数和平均晶粒尺寸先增大后减小,而位错密度和晶格应变则呈现相反的变化趋势.当基底温度为250℃时,In2O3:Sn样品沿(222)晶面的织构系数最高、平均晶粒尺寸最大、位错密度最小、晶格应变最低,薄膜具有最佳的(222)晶面择优取向生长特性和微观结构性能.

The thin films of tin doped indium oxide(In2O3:Sn)were prepared onto glass substrates by radio-frequency(RF)magnetron-sputtering system,using a sintered ceramic target with a mixture of indium oxide(In2O3)and tin oxide(SnO2).The effect of substrate temperature on the grain growth and mirostructure of In2O3:Sn samples was characterized by X-ray photoelectron spectroscopy(XPS),X-ray diffraction(XRD),scanning electron microscopy(SEM)and other characterization methods.The experimental results show that all the samples are polycrystalline with a cubic bixbyite type crystal structure.The substrate temperature significantly affects the grain growth and mirostructural characteristics of the samples.As the substrate temperature increases,the texture coefficient of(222)plane and average crystallite size increase firstly and then decrease,while the dislocation density and lattice strain exhibit an opposite trend.The In2O3:Sn sample deposited at 250℃possesses the best crystalline quality and microstructural properties,with the highest texture coefficient of(222)plane,the maximum average crystallite size,the minimum dislocation density and the lowest lattice strain.