4NiO-B2O3-V2O5低温烧结微波介质陶瓷的烧结特性、相结构和微波介电性能研究

The study on the sintering behavior, phase structure and microwave dielectric properties of 4NiO-B2O3-V2O5 low temperature sintered microwave dielectric ceramics

以分析纯的B2O3、V2O5和NiO为原料,采用传统的固相反应法制备了4NiO-B2O3-V2O5微波介质陶瓷。利用SEM、XRD和微波网络分析仪分别对材料的烧结行为、微观结构、相变特性和微波介电性能进行了系统的研究。结果表明,4NiO-B2O3-V2O5陶瓷为复相结构。当烧结温度由575℃升高至675℃时,样品的体积密度、品质因素(Q×f)和谐振频率温度系数(τf)值呈现出先增大后减小的趋势,εr一直减小。当烧结温度为650℃时,陶瓷具有最佳的微波介电性能:Q×f=19692GHz,εr=4.9,τf=-20×10^-6/℃。低的烧结温度、优异的微波介电性能表明4NiO-B2O3-V2O5陶瓷可以作为滤波器、谐振器等微波器件的备选材料。

4NiO-B2O3-V2O5 microwave dielectric ceramics were prepared by a traditional solid phase reaction method using the analytically pure B2O3,V2O5 and NiO as raw materials.The sintering behavior,microstructure,phase transformation and microwave dielectric properties of ceramics were systematically investigated by SEM,XRD and microwave network analyzer.The results showed that 4NiO-B2O3-V2O5 ceramics were multiphase structure.With increasing the sintering temperature from 575 to 675℃,the bulk density,Q×f and τf values of ceramics showed a similar trend with increasing firstly and then decreasing,but the εr was always decreasing.As the sintering temperature was 650℃,the ceramic exhibited the best microwave dielectric properties of Q×f =19 692 GHz,εr=4.9,τf=-20×10^-6 /℃.Low sintered temperature and good microwave dielectric properties indicated that 4NiO-B2O3-V2O5 ceramic was a candidate applied in microwave devices,such as filters and resonators.