基于谐波抑制的内匹配高效GaN功率放大器设计

Design of Harmonic Suppression Technology-Based Internally Matched High-Efficiency GaN Power Amplifier

采用了内匹配技术和谐波抑制技术,设计并实现了一款3.8 GHz^4.2 GHz的功率放大器设计。该放大器采用南京电子器件研究所自主研制的的GaN HEMT管芯芯片。通过优化设计该放大器在10%的相对带宽、漏源电压28 V、10%占空比的脉冲输入的工作条件下,实现了输出峰值功率Pout大于40W,漏极输出功率效率大于60%,充分显示了GaN功率器件宽带、高效和高功率的工作性能,具有广阔的工程应用前景。

The internal matching technology and the harmonic suppression technology are used to design and implemente a design of 3.8 GHz^4.2 GHz power amplifier.The amplifier was based on a GaN HEMT independently developed by Nanjing Electronic Device Institute.By optimizing the design,the amplifier achieves a peak output power(Pout)greater than 40W and the drain output power efficiency of the amplifier greater than 60%,under the condition of a relative bandwidth of 10%,a drain-source voltage of 28 V,and the input of 10% duty cycle pulse signal,which fully shows the GaN power device’s broadband,high-efficiency,high-power performance and broad prospects for engineering applications.