半导体光放大器交叉相位调制点的优化设计

Optimal Design of Cross-Phase Modulation Points for Semiconductor Optical Amplifier

提出了一种采用斐索干涉仪测量由交叉相位调制产生的非线性相移的实验方案,得到了不同探测光功率、控制光功率和偏置电流条件下的相移公式。结果表明,非线性相移与控制光功率和偏置电流呈单调递增关系,与探测光功率呈单调递减关系,优化设计了半导体光放大器交叉相位调制的工作点。提出了影响非线性相移的最佳相位调制点的确定方法,得到π/2相移的最佳相位调制参数:探测光功率为0.29 mW,控制光功率为0.5 mW,偏置电流为276 mA。

In this study, we proposed an experimental scheme for measuring the nonlinear phase shift generated by cross-phase modulation using a Fizeau interferometer. Subsequently, a formula was comprehensively obtained for evaluating the phase shift under different probe light powers, control light powers, and bias currents. The results denote that the nonlinear phase shift exhibits a monotonically increasing relation with the control light power and the bias current, and in contrast it exhibits a monotonically decreasing relation with the probe light power. Thereby, the operating points of cross-phase modulation for the semiconductor optical amplifier were optimized. Further, we proposed a method for determining the optimal phase modulation points that affect the nonlinear phase shift, and the optimal phase modulation parameters for a phase shift of π/2 were obtained. The probe light power is 0.29 mW, the control light power is 0.5 mW, and the bias current is 276 mA.