基于HfN_x∶Zn薄膜的负微分阻变存储器

Resistive random-access memory based on HfN_x∶Zn thin films

基于HfNx∶Zn薄膜材料制备了阻变式随机存储器,获得了良好的阻变可靠性,并观察到负微分电阻现象.Au/HfNx∶Zn/Pt器件表现出快速的擦写速度(<150ns)、优异的循环耐受性(>103)、长时间保持性(85℃时>10^5 s)、较小的开启/关闭电压波动性(3.5%/8.5%)和较低的高阻/低阻波动性(13.5%/10.1%).Zn元素的掺入为薄膜引入了大量的N空位缺陷态,根据器件运行的I-V拟合曲线,得知器件阻变机制与N空位缺陷的存在有直接的关系.

Resistive random-access memory was fabricated based on HfN x ∶Zn thin films, in which excellent switching reliability and negative differential resistance behavior could be obtained. The Au/HfN x ∶Zn/Pt devices presented fast switching speed (<150 ns), good cycling endurance (>10 3), long-term retention (>10^5 s at 85 ℃), narrow distribution of SET/RESET switching voltages (3.5%/8.5%) and small fluctuation of high/low resistance states (13.5%/10.1%). The introduction of Zn element into the HfN x films could produce many N vacancy defects. According to the fitting result of I-V curve, the switching mechanism could be directly related to the N vacancy defects.