GaN芯片阵列射流冷却技术研究

The heat transfer feature of jet impinement cooling for GaN chip

针对高热流密度GaN芯片局部点热流的散热特点,采用射流冷却传热方法,对340 W/cm^2的高热流密度进行了冷却,热源以4×4点阵形式存在,实验分析了工质流量、热负荷等因素对系统换热性能的影响。以水为冷却工质,工质流量≤4.47 L/min,试验测得点热源温度低于78.8℃。

In this thesis, considering the heat dissipation characteristics of local heat spot arrays in the GaN chips, the chips were cooled using jet impingement cooling. The maximum heat flux in single heat spot was 340 W/cm^2 and the heat spots array ranged 4×4 in the chips. The influence of thermal performance in cooling system was discussed including flow rate and heat flux. Water was used as the working fluid and the heat flow rate was less than 4.47 L/min. The experimental results show that the temperature of heat spot is less than 78.8 ℃.