期刊文献+

基于DSRD的纳秒级固态脉冲发生器的研制 被引量:2

Development of the Nanosecond Solid-State Pulse Generator Based on DSRD
下载PDF
导出
摘要 采用新型半导体开关漂移阶跃恢复二极管(DSRD)研制了一种纳秒级固态脉冲发生器。通过建立DSRD仿真等效模型,模拟DSRD器件的真实输出波形;采用双极并联结构电路设计,满足DSRD工作所需的电流要求;构建发生器系统工作电路仿真模型,并分析了电路参数对DSRD脉冲发生器系统输出波形的影响。针对脉冲发生器小型化的问题,将部分模块集成设计制作,优化布局,有效减少体积,减轻重量。结果表明:其输出电压可达3.74 kV,脉冲前沿8.2 ns,在重复频率200 Hz条件下可以稳定工作。研制出的脉冲发生器实现了较好的波形输出,为进一步实现固态脉冲源的小型化打下基础。 A nanosecond solid-state pulse generator was developed by using the new semiconductor switch drift step recovery diode ( DSRD). The simulation equivalent model of DSRD was established to simulate the real output waveform of DSRD devices. The bipolar parallel structure circuit was adopted to meet the current requirements of the DSRD. The working circuit simulation model of the generator system was constructed, and the influence of circuit parameters on the output waveform of the DSRD pulse generator system was analyzed. Aiming at the problem of miniaturization of the pulse generator, some modules were integrated, designed and manufactured to optimize the layout, it effectively reduces the bulk and weight of the solid-state pulse generator. The results show that the output voltage can reach 3. 74 kV , the pulse front edge is 8. 2 ns, and it can work stably at the repetition frequency of 200 Hz. The developed pulse generator achieves a good output waveform , and lays a foundation for the miniaturization of the solid-state pulse source.
作者 张琦 宋法伦 金晓 李飞 王淦平 Zhang Qi;Song Falun;Jin Xiao;Li Fei;Wang Ganping(Graduate School , China Academy of Engineering Physics , Mianyang 621900, China;Institute of Applied Electronics, China Academy of Engineering Physics , Mianyang 621900, China)
出处 《半导体技术》 CAS 北大核心 2019年第6期483-487,共5页 Semiconductor Technology
关键词 漂移阶跃恢复二极管(DSRD) 脉冲发生器 固态化 快前沿 高重频 drift step recovery diode ( DSRD ) pulse generator solid-state fast rise-time high repetition frequency
  • 相关文献

参考文献4

二级参考文献16

  • 1Kardo-Sysoev A F, Zazulin S V, et al. High Repetition Frequency Power Nanosecond Pulse Generation[ C ]//11th IEEE International Pulsed Power Conference, 1997:420 - 424.
  • 2Kardo-Sysoev A F. New Power Semiconductor Devices for Generation of Nano- and Subnanosecond Pulses[ G ]// Taylor J D. Ultra-Wideband Radar Technology, 2001: 205 - 290.
  • 3Brylevsky V I, Efanov V M, et al. Power Nanosecond Semiconductor Opening Plasma Switches [ C ]//Twenty- Second International Power Modulator Symposium, 1996: 51 - 54.
  • 4Efanov V M, Kardo-Sysoev A F, et al. Powerful Semiconductor 80 kV Nanosecond Pulser[ C]//11th IEEE Internationa Pulsed Power Conference, 1997 : 985 - 987.
  • 5Kozlov V A, Smimova I A, et al. New Generation of Drift Step Recovery Diodes (DSRD) for Subnanosecond Switching and High Repetition Rate Operation[ C]//Conference Record of the Twenty-Fifth Intemational Power Modulator Symposium, 2002: 441- 444.
  • 6S A Belyaev,V G Bezuglov,S G Garanin,et al.New Gen- eration of High-power Semiconductor Closing Switches for Pulsed Power Applications[A].IEEE Pulsed Power Plas- ma Science Conference [C].Prague, Czech Republic, 2007, 7 : 1525-1528.
  • 7Lin Liang, Quan Wei, Wu Hong, et al.Reducing Turn-on Dissipation of RSD from Application[A].IEEE Power Mod- ulator and High Voltage Conference[C].San Diego,2012, 6:3-7.
  • 8苏建仓,丁臻捷,彭建昌,等.重复频率脉冲功率技术应用及展望[A].第二届全国脉冲功率会议论文集[c].西安.2011:452-456.
  • 9A Ogunniyi,H O'Brien,C J Shaheen,et al.Device De- velopment and Pulse Performance of Super-12 Si SGTO[A]. IEEE 38th International Conference on Plasma Sciences[C]. 2011.
  • 10Weihua Jiang,Akira Tokuchi.Repetitive Linear Transfor- mer Driver Using Power MOSFETs[J].IEEE Trans. on Plas- ma Science, 2012,40 (10) : 2625-2628.

共引文献21

同被引文献14

引证文献2

二级引证文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部