摘要
采用直流磁控溅射法,通过调整溅射气压制备双层和三层Mo背电极层,并在其上制备(In,Ga)2Se3(IGS)和Cu(In,Ga)Se2(CIGS)。采用X射线荧光光谱(XRF)和X射线光电子能谱(XPS)测量成分;用扫描电子显微镜(SEM)观察IGS和CIGS的表面和断面形貌;用X射线衍射(XRD)研究背电极层对IGS和CIGS结晶取向的影响。结果表明,背电极的不同可影响CIGS表面Na的分布;三层Mo背电极层上制备的CIGS吸收层具有112择优,晶粒较大,贯通性更优;三层Mo背电极层上制备的CIGS电池的效率为14.1%,其中较双层Jsc和FF分别有9.4%和15.5%的提升。
Mo Bilayer and trip layer,prepared by DC magnetron sputtering using various sputtering pressure,as backelectrodes of(In,Ga)2 Se3(IGS)and Cu(In,Ga)Se2(CIGS). XRF and XPS were used to study the compositions of CIGS.The plane & cross section morphologies of IGS and CIGS were observed by scanning electron microscope(SEM). X-raydiffraction(XRD)was used to study the microstructure of the films. The results revealed that the content of Na in CIGSwas affected by the back electrodes. 112 preferential orientation CIGS with lager grain size was deposited on trip layer. Jscand FF receptively increased 9.4% and 15.5% with the CIGS prepared on trip layer,and the efficiency of the cellreached 14.1%.
作者
宋斌斌
于涛
张传升
李博研
赵树利
李伟
Song Binbin;Yu Tao;Zhang Chuansheng;Li Boyan;Zhao Shuli;Li Wei(National Institute of Clean-and-Low-Carbon Energy, Beijing 102211, China;Beijing Engineering Research Center of Nano-Structure Thin-Film Solar Cell, Beijing 102211, China)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2019年第5期1298-1303,共6页
Acta Energiae Solaris Sinica
基金
神华集团科技创新项目(SHJT-15-37)
关键词
磁控溅射
分子束外延
NA
CIGS
形貌结构
magnetron sputtering
molecular beam epitaxy
Na
CIGS
morphology and structure
