8T-全局曝光CMOS图像传感器单粒子翻转及损伤机理

Single-Event Upset and Damage Mechanism in 8T-Global Shutter CMOS Image Sensors

针对卫星轨道上空间辐射环境引起的光学相机性能退化问题,采用8晶体管(8T)-全局曝光互补金属氧化物半导体(CMOS)图像传感器进行重离子辐照实验。实验结果显示,不同功能模块寄存器发生单粒子翻转,导致输出图像出现不同的异常模式,主要表现为输出图像“卡零”、若干相邻列输出异常、整幅图像“花屏”等。结合器件的不同子电路功能、工艺结构和工作原理,分析重离子入射器件微观作用过程对宏观图像异常模式的影响,深入探讨器件不同功能模块单粒子翻转的敏感性和损伤机理。研究结果可为CMOS图像传感器加固设计、单粒子地面模拟实验方法及标准和评估技术的建立提供重要参考。

To clarify the mechanism associated with the deterioration of optical cameras in orbit due to radiation, a heavy-ion irradiation test was performed on an 8-transistor (8T) global shutter complementary metal oxide semiconductor (CMOS) image sensor. The experimental results denote that radiation exposure to different functional modules leads to different abnormalities in the resulting images, including forcing the output image to be always zero, the creation of output anomalies in several adjacent column outputs, and the corruption of data over the whole image. Further, the effect of the microcosmic process of the heavy-ion irradiation in the device on the macrocosmic abnormal regions of the resulting images are analyzed for various sub-circuit functions, process structures, and working principles of devices. This analysis provides an overview of the sensitivity and damage mechanism with respect to the different functional modules of the camera sensor. These research results provide significant reference data for the radiation-proofing design of CMOS image sensors, the experimental methods for single-event simulation on the ground, and the establishment of standards and assessment techniques.