ZnPc/PbPc共混蒸镀薄膜二极管的制备与工作特性

The Preparation of the ZnPc/PbPc Hybrid Vapor Deposition Thin Film Diode

有机薄膜二极管选取酞菁锌和酞菁铅(ZnPc和PbPc)进行混合作为器件的有源层,利用多种镀膜方式,制备了结构为Cu/ZnPc+PbPc/Al的器件,其中,Zn Pc∶PbPc混合的质量比分别为1∶1、4∶5和5∶4,对二极管进行了输出特性测试和混合薄膜的吸收光谱测试。结果表明,3种混合方式的二极管均具有整流特性。通过实验分析可以得出:ZnPc∶Pb Pc的混合质量比为1∶1的器件的载流子的传输最快。实验结果表明:适当的ZnPc∶PbPc的混合质量比可以降低肖特基势垒的高度,从而使载流子的迁移率加大。由实验结果计算得出,ZnPc∶PbPc的混合质量比为1∶1的器件的势垒高度为0.355eV,影响因子n为18.21。

Organic thin film diode selected zinc phthalocyanine and plumbum phthalocyanine(ZnPc and PbPc)were mixed as the active layer of the device.The hybrid thin film diodes structure of Cu/ZnPc+PbPc/Al was prepared using a variety of coating methods,among them,the mass ratio of ZnPc∶PbPc was 1∶1,4∶5 and 5∶4,respectively.The electrical tests and optical tests were carried out.The results show that three types of the hybrid thin film diodes have a rectifying characteristic.Through the experimental analysis,it can be concluded that when the mass ratio of the two materials is 1∶1,the carrier transport of the device is the fastest,and the appropriate content of PbPc can reduce the height of the Schottky barrier,thus the carrier mobility increasing.It is calculated that when the mass ratio of the two materials is 1∶1,the barrier height of the device is 0.355eV,the influence factor is 18.21.