摘要
Standing on the potential for high-speed modulation and switching in the terahertz (THz) regime, all-optical approaches whose response speeds mainly depend on the lifetime of nonequilibrium free carriers have attracted a tremendous attention. Here, we establish a novel bi-direction THz modulation experiment controlled by femtosecond laser for new functional devices. Specifically, time-resolved transmission measurements are conducted on a series of thin layers Bi2Se3 films fabricated straightforwardly on AI2O3 substrates, with the pump fluence range from 25(iJ/cm2 to 200 |iJ/cm2 per pulse. After photoexcitation, an ultrafast switching of THz wave with a full recovery time of ?1 Ops is observed. For a longer timescale, a photoinduced increase in the transmitted THz amplitude is found in the 8 and 10 quintuple layers (QL) BizSR, which shows a thickness-dependent topological phase transition. Additionally, the broadband modulation effect of the 8 QL Bi2Se3 film is presented at the time delays of 2.2ps and 12.5ps which have a maximum modulation depth of 6.4% and 1.3% under the pump fluence of 200(iJ/cm2, respectively. Furthermore, the absorption of a optical phonon at 1.9 THz shows a time-dependent evolution which is consistent with the cooling of lattice temperature.
