60Coγ射线辐照单层石墨烯的损伤效应

Effect of 60Coγ-Ray Irradiation on Defect Formation of Single Layered Graphene

石墨烯是一种在常温下拥有极低的电阻率、极高的电子迁移率和高透光性的零带隙能带结构的新型碳材料,由于石墨烯优异的电学特性、光学特性和光电性能使它为研制下一代超快、高频、宽光谱光电器件提供了可能,目前已有许多基于石墨烯的光电探测器件研究,若将此类器件未来应用于航天器必有巨大优势。基于此本工作首先用化学气相沉积法制备了单层多晶石墨烯,然后进行了伽马射线辐照单层石墨烯实验,并用拉曼光谱表征了辐照前后石墨烯微观结构变化,对辐照后石墨烯的缺陷间平均距离,缺陷密度等进行了分析,辐照使单层石墨烯产生缺陷,出现无序的sp^3杂化结构。此研究可为石墨烯光电器件在外层空间中的应用打下基础,为其他空间环境因素对石墨烯的影响研究提供借鉴参考。

Single-layered polycrystalline graphene,synthesized by chemical vapor deposition(CVD),was modified by 60Coγ-ray irradiation.The effect of the γ-ray irradiation on the microstructures,electronic structures and photoelectric properties of the single-layered graphene was investigated with Raman spectroscopy.The results show that the γ-ray irradiation had a major impact on the microstructure and electronic structure.To be specific,depending on the dosage and energy,the γ-ray irradiation was responsible for the formation of quite a few disordered sp^3 hybrid bonds because of the irradiation induced defects,though weakly affecting the dominance of sp^2 hybrid orbitals.Irradiated by γ-ray dosage of 94 krad and energy of 1.3325 MeV,the average separation of the γ-ray induced defects was estimated to be 13.04 nm,indicating that single-layered graphene has some irradiation resistance as a potential optoelectronic material for spacecraft missions.