摘要
采用JGP300型超高真空磁控溅射系统,在蓝宝石(Al2O3)、p-Si和氧化铟锡(ITO)导电玻璃衬底上制备了ZnO薄膜。使用X射线衍射仪(XRD)、紫外分光光度计(UV)、原子力显微镜(AFM)分析了氧氩比对ZnO薄膜晶体结构、光学特性和表面形貌的影响。测试结果表明:ZnO薄膜均为单一六方纤锌矿结构,且均表现出c轴择优取向。随着氧氩比的减小,ZnO(002)衍射峰强度增大,衍射峰半高宽(FWHM)减小。氧氩比为1∶4条件下制备的ZnO薄膜结晶质量较好。随着氧氩比的增大,ZnO薄膜表面粗糙度先增大后减小。在可见光范围内(波长400~700 nm),氧氩比为3∶2条件下制备的ZnO薄膜,平均透过率超过70%。
ZnO thin films were prepared on sapphire(Al 2O 3),p-Si and indium tin oxid(ITO)conductive glass substrates by using JGP300 ultra-high vacuum magnetron sputtering system.X-ray diffraction(XRD),ultraviolet spectrophotometer(UV)and atomic force microscope(AFM)were used to study the effects of oxygen-argon ratio on the crystal structure,photometric characteristics and surface morphology of ZnO thin films.The test results show that all ZnO thin films exhibits single hexagonal wurtzite structure with c-axis preferred orientation.With the oxygen-argon ratio decreasing,the intensity and full width at half maximum(FWHM)of ZnO(002)diffraction peak increases and decreases,respectively.The crystallization quality of prepared ZnO thin films is better when the oxygen-argon ratio is 1∶4.With the oxygen-argon ratio increasing,the surface roughness of ZnO thin films increases first and then decreases.The average transmittance of prepared ZnO thin films exceeds 70%at the visible light range(the wavelength 400~700 nm)when the oxygen-argon ratio is 3∶2.
作者
张猛
付宏远
孙艳艳
赵洋
王辉
ZHANG Meng;FU Hongyuan;SUN Yanyan;ZHAO Yang;WANG Hui(Physics & Engineering School,Henan University of Science & Technology,Luoyang 471023,China;Henan Key Laboratory of Photoelectric Energy Storage Materials & Applications,Henan University of Science & Technology,Luoyang 471023,China)
出处
《河南科技大学学报(自然科学版)》
CAS
北大核心
2019年第6期80-83,88,M0007,共6页
Journal of Henan University of Science And Technology:Natural Science
基金
国家自然科学基金项目(61674052,11404097)
河南科技大学大学生研究训练计划(SRTP)基金项目(2018196,10464024)
关键词
ZNO
磁控溅射
氧氩比
光电学特性
薄膜结构
ZnO
magnetron sputtering
oxygen-argon ratio
optical and electrical properties
film structure