CCD及CMOS图像传感器的质子位移损伤等效分析

Displacement Damage of CCD and CMOS Image Sensor Induced by Proton

对位移损伤敏感器件CCD及CMOS图像传感器进行了3,10,23MeV质子辐照试验,获得了电荷转移效率及暗电流退化程度分别随非电离能量损失(NIEL)变化的线性关系,验证了基于NIEL的位移损伤等效方法的可行性。为准确预测抗辐射加固工程中,器件屏蔽结构带来的能量崎离、次级粒子等非理想因素对器件参数退化的影响,利用Geant4计算了不同质子能量下的NIEL值。结果表明,随着质子能量降低,计算得到的NIEL值与解析法给出的理想NIEL值的差异增大。因此,对于结构复杂的器件,有必要建立器件结构模型,以便准确计算NIEL。

To obtain the liner relationship between charge transfer efficiency, dark signal, and non-ionizing energy loss(NIEL), the CCD and CMOS image sensor are irradiated by protons of 3, 10, 23 MeV, respectively. To accurately predict the effect of non-ideal factors such as energy degradation and secondary particles caused by shielding structure on the degradation of device parameters, NIEL at different proton energies is calculated by Geant4 toolkit. The results show that the difference between the calculated NIEL and the ideal NIEL given by analytical method increases with the decrease of proton energy. Therefore, for devices with complex structure, it is necessary to develop a device structure model for accurately calculating NIEL.