摘要
Single-photon emitters (SPEs) are one of the key components in quantum information applications. The ideal SPEs emit a single photon or a photon-pair on demand, with high purity and distinguishability. SPEs can also be integrated in photonic circuits for scalable quantum communication and quantum computer systems. Quantum dots made from Ⅲ-Ⅴ compounds such as InGaAs or GaN have been found to be particularly attractive SPE sources due to their well studied optical performance and state of the art industrial flexibility in fabrication and integration. Here, we review the optical and optoelectronic properties and growth methods of general SPEs. Subsequently, a brief summary of the latest advantages in Ⅲ-Ⅴ compound SPEs and the research progress achieved in the past few years will be discussed. We finally describe frontier challenges and conclude with the latest SPE fabrication science and technology that can open new possibilities for quantum information applications.
Single-photon emitters(SPEs)are one of the key components in quantum information applications.The ideal SPEs emit a single photon or a photon-pair on demand,with high purity and distinguishability.SPEs can also be integrated in photonic circuits for scalable quantum communication and quantum computer systems.Quantum dots made from III–V compounds such as InGaAs or GaN have been found to be particularly attractive SPE sources due to their well studied optical performance and state of the art industrial flexibility in fabrication and integration.Here,we review the optical and optoelectronic properties and growth methods of general SPEs.Subsequently,a brief summary of the latest advantages in III–V compound SPEs and the research progress achieved in the past few years will be discussed.We finally describe frontier challenges and conclude with the latest SPE fabrication science and technology that can open new possibilities for quantum information applications.
