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Stable single photon sources in the near C-band range above 400K 被引量:1

Stable single photon sources in the near C-band range above 400K
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摘要 The intrinsic characteristics of single photons became critical issues since the early development of quantum mechanics. Nowadays, acting as flying qubits, single photons are shown to play important roles in the quantum key distribution and quantum networks. Many different single photon sources (SPSs) have been developed. Point defects in silicon carbide (SiC) have been shown to be promising SPS candidates in the telecom range. In this work, we demonstrate a stable SPS in an epitaxial 3CSiC with the wavelength in the near C-band range, which is very suitable for fiber communications. The observed SPSs show high single photon purity and stable fluorescence at even above 400 K. The lifetimes of the SPSs are found to be almost linearly decreased with the increase of temperature. Since the epitaxial 3C-SiC can be conveniently nanofabricated, these stable near Cband SPSs would find important applications in the integrated photonic devices. The intrinsic characteristics of single photons became critical issues since the early development of quantum mechanics. Nowadays, acting as flying qubits, single photons are shown to play important roles in the quantum key distribution and quantum networks. Many different single photon sources(SPSs) have been developed. Point defects in silicon carbide(SiC) have been shown to be promising SPS candidates in the telecom range. In this work, we demonstrate a stable SPS in an epitaxial 3 CSiC with the wavelength in the near C-band range, which is very suitable for fiber communications. The observed SPSs show high single photon purity and stable fluorescence at even above 400 K. The lifetimes of the SPSs are found to be almost linearly decreased with the increase of temperature. Since the epitaxial 3 C-SiC can be conveniently nanofabricated, these stable near Cband SPSs would find important applications in the integrated photonic devices.
出处 《Journal of Semiconductors》 EI CAS CSCD 2019年第7期80-84,共5页 半导体学报(英文版)
基金 supported by the National Key Research and Development Program of China(Grant No.2016YFA0302700) the National Natural Science Foundation of China(Grants No.61725504,61327901,61490711,11821404 and11774335) the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(CAS)(Grant No.QYZDY-SSWSLH003) Anhui Initiative in Quantum Information Technologies(AHY060300 and AHY020100) the Fundamental Research Funds for the Central Universities(Grant NosWK2030380017 and WK2470000026)
关键词 single PHOTON source STABLE photoluminescence silicon CARBIDE ELEVATED temperature single photon source stable photoluminescence silicon carbide elevated temperature
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