退火温度对ZnO薄膜晶体管电学性能的影响（英文）

Effect of annealing temperature on the electrical properties of ZnO thin-film transistors

为研究退火温度(从室温到500℃)对ZnO薄膜和薄膜晶体管(thin-film transistor,TFT)电性能的影响,使用X射线衍射、扫描电子显微镜、原子力显微镜、X射线光电子能谱和光致发光等技术对ZnO-TFT进行表征。实验结果表明,具有400℃退火温度的ZnO-TFT表现出最佳性能,迁移率为2.7cm^2/Vs,阈值电压为4.6V,开/关电流比为5×10^5,亚阈值摆幅为0.98V/Dec。电性能的改善可归因于载流子浓度的降低,ZnO膜结晶的增强,以及氧化物半导体层和绝缘层之间界面的改善。

In order to study the influence of annealing temperature (from room temperature to 500℃) on the electrical properties of ZnO thin film and thin-film transistors (TFTs), we carefully characterize the ZnO-TFT by using a wide range of techniques including X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The results show that the ZnO-TFTs annealed at 400℃ have the best performance with mobility of 2.7cm^2/Vs, threshold voltage of 4.6V, on/off current ratio of 5×10^5 and subthreshold swing of 0.98V/Dec. The improvement of the electrical performance could be attributed to the decrease of carrier concentration, the enhancement of crystallization in ZnO films, and the improvement of interface between the oxide semiconductor layer and the insulation layer.