有机和杂化阻变材料与器件

Organic and Hybrid Resistive Switching Materials and Devices

阻变存储器具有功耗低、微缩性好、可大规模三维堆积、与互补金属氧化物半导体(CMOS)工艺兼容等诸多优势,可以满足高性能信息存储的关键要求。采用有机及杂化阻变材料作为存储介质构建器件,通过分子设计及合成策略不仅可实现器件的轻量化和柔性集成,还可以灵活地调控分子的电学特征以及器件的存储性能。本文全面综述了有机及杂化阻变材料与器件的最新进展,特别关注它们在电学性能调控和柔性存储性能方面的设计原则,并对有机及杂化阻变材料与柔性存储器件的当前挑战及未来发展前景进行了讨论。

The explosive increase in digital communication of the Big Data and Internet of Thing era spurs the development of universal memory that can run at a high speed with high density and nonvolatile storage capability,as well as demonstrates superior mechanical flexibility for wearable applications.Among various candidates for the next generation information storage technology,resistive switching memories distinguish themselves with low power consumption,excellent downscaling potential,large scale 3D stacking ability and CMOS-compatibility,fulfilling the key requirements for high performance data storage.In addition,employing organic and hybrid switching media allows light weight and flexible integration of molecules with tunable device performance via molecular design-cum-synthesis strategy.In this review,we try to present a timely and comprehensive review of the recent progress in organic and hybrid resistive switching materials and devices,with particular attention on their designing principle for electronic properties tuning and flexible memory performance.The current challenges posed on the development of organic and hybrid resistive switching material and flexible memory devices,together with their future perspectives,are also discussed.