用PECVD工艺制备功能装饰氧化硅薄膜的性能

Properties of Functional Decorative Silicon Oxide Films Prepared by PECVD

用PECVD技术制备氧化硅薄膜,研究了生成样品的位置对薄膜成分、结构和性能的影响,探讨了制备兼具高透光性和耐刮擦性的功能装饰氧化硅薄膜的方法。结果表明,在阳极位置生成的薄膜具有Si(CH3)nO有机氧化硅结构,在380~780 nm波长范围内透光率高达90%~98%,但是薄膜的结构疏松,硬度仅为2 GPa。提高制备温度可使薄膜硬度提高至6 GPa,但是透光率略有降低;在阴极位置生成的薄膜具有无机氧化硅复合非晶碳结构,薄膜结构致密,硬度可达15 GPa,但是在380~780 nm波长范围内透光性差;增加O2反应气体可促使碳与氧反应生成二氧化碳,非晶碳结构消失,薄膜透光率提高到99%,但是硬度降低到9 GPa。

Silicon oxide films were prepared on silicon- and quartz-substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The dependence of composition, structure and properties of the films were investigated on the location of substrates in the reaction chamber, namely, which were fixed onto either cathode- or anode-electrode plate. Meanwhile, the preparation of functional decorative silicon oxide films with high transparency and scratch resistance was assessed in terms of processing parameters. The results show that the film synthesized on the substrate attached to anode is organosilicon oxide of Si (CH3)nO with transmittance of as high as 90%~98% in the wavelength range of 380-780 nm, unfortunately, the film is loose with hardness of only 2 GPa. However, the hardness of the film can be increased to 6 GPa by increasing the substrate temperature, as a result, the transmittance of the film decreases slightly;The film synthesized on the substrate attached to the cathode composes of inorganic silicon oxide and amorphous carbon. That film is compact with hardness of up to 15 GPa, but poor transmittance in the wavelength range of 380~780 nm. Increasing the O2-flux can promote the reaction of carbon and oxygen to produce carbon dioxide, thereby to eliminate the amorphous carbon. Therefore, the transmittance of the film increases to 99%, but the hardness decreases down to 9 GPa.