摘要
IGBT逆变电源的应用越来越受到人们的关注,尤其是在生产纳米装置中的应用。IGBT的使用,使得产品具有高频化、小型化、精度高、效率高和重量轻等优点。频率高、电压高的大功率电源,控制系统也较复杂,这就需要不断创新。主要介绍了等离子逆变电源的构成、工作原理和关键器件的选型,并通过控制系统及温升实验进行验证,达到满意的效果。
The application of the insulated gate bipolar transistor(IGBT)inverse power supply is drawn more attention recently,especially in the production of nanometer equipment.The usage of IGBT makes products be of advantages of high frequency,small size,high efficiency and light weight.However,high-power power supply with high frequency and high voltage makes control system be complex.The structure of plasma power supply,its operating principle and model selection of key components were introduced.At the meanwhile,plasma power supply was verified through control system and temperature rise test,and satisfied result was achieved.
作者
汤海梅
TANG Haimei(Intelligent Manufacturing College,Tianjin Sino-German University of Applied Sciences,Tianjin 300350,China)
出处
《电气传动》
北大核心
2019年第7期94-96,共3页
Electric Drive
基金
2018年天津市科技计划项目(18JCTPJC53300)
关键词
等离子逆变电源
纳米生产用电源
高频引弧
plasma inverse power supply
power supply for nanometer production
high frequency arc starter