碳化硅MOSFET栅极驱动的优化设计

Optimal Design of Silicon Carbide MOSFET Gate Driver

碳化硅(SiC)功率器件突破了硅基器件在开关速度等性能上的极限,能够显著减少电力电子装置的重量、体积,提高电力电子系统的功率密度与性能。而SiC器件极快的开关速度对因封装、布线及应用电路引起的寄生参数和器件自身的结电容等非常敏感,极易发生开关振荡、串扰以及驱动失效等问题,给高密度、大功率场合下的应用带来挑战。首先分析了SiC金属-氧化物半导体场效应晶体管(MOSFET)应用电路中开关振荡和串扰的产生机理,提出SiC MOSFET的驱动电路设计要点并设计制作一种SiC MOSFET驱动电路,利用有限元软件对主回路和驱动回路的印刷电路板(PCB)布线进行了仿真分析,随后搭建了DC/DC升压变换器进行实验,验证了此处理论分析与碳化硅MOSFET驱动电路的设计。

Silicon carbide(SiC)power devices break through the limits of silicon-based devices in the switching speed and other performance,which apparently decreases the weight and volume of power electronics devices,also increases the power density and performance of the system.But the utral-high switch speed of SiC devices are sensitive to the junction capacitance and the parasitic inductance caused by package,wiring and application circuit,which makes high risk of oscillating,cross-talk and drive failure in the SiC application,and brings challenges to the high density and high power applications occasions.Analyzes the mechanism of switching oscillation and cross-talk for the SiC metaloxide-semiconductor field-effect transistor(MOSFET)application,then summarizes the keynotes of the optimal design of driver for SiC MOSFET.A SiC MOSFET gate driver is designed,and the printed circuit board(PCB)wiring of the main circuit and the driver circuit is simulated and analyzed by using the finite element software.At last,a DC/DC Boost converter is built and tested to verify the theoretical analysis and the SiC MOSFET driver design.