基于太赫兹半导体量子阱器件的光电表征技术及应用

Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications

光电表征技术是太赫兹应用技术的重要基础,涵盖了太赫兹频段光电器件表征、光谱测量、光束改善以及通信和成像应用等多个方面,在太赫兹应用领域中发挥着重要作用。介绍了太赫兹频段两种半导体量子器件的工作原理和最新进展,综述了二者在太赫兹脉冲功率测量、探测器响应率标定等光电表征技术中的应用及其在太赫兹快速调制与探测、太赫兹扫描成像系统中的应用,最后介绍了太赫兹光电表征技术的改善,包括激光源光束质量改善和探测器有效探测面积的提高方法等,并给出了器件及表征技术的潜在应用。

Photoelectric characterization technique is an important foundation of the terahertz technology. It covers photoelectric device characterization, spectral measurement, beam improvement, and communication and imaging applications in terahertz region, and plays an important role in terahertz application field. Firstly, the working principle and the latest progress of two kinds of terahertz semiconductor quantum devices are presented. Then, their applications in terahertz photoelectric characterization such as pulse light power measurement and detector responsivity calibration, and their applications in terahertz fast modulation and detection as well as terahertz scanning imaging systems are summarized. Finally, the improvements of the above characterization techniques are also introduced and discussed, including the methods to improve the terahertz light beam quality and the effective detection area of detectors. The potential applications of devices and characterization techniques in the future are also presented.