期刊文献+

190 GHz大功率输出平衡式二倍频器 被引量:2

190-GHz Balanced Frequency Doubler with High Output Power
原文传递
导出
摘要 基于反向串联型砷化镓平面肖特基容性二极管,采用平衡式二倍频结构,研制出了一种190GHz大功率输出二倍频器。使用三维电磁场与非线性谐波平衡联合的方法进行了仿真,并根据仿真结果完成了倍频器的加工、装配和测试。倍频器在182~196GHz输出频率范围内的倍频效率可达8%以上;当输出频率为187GHz时,倍频效率和输出功率可分别达到15.4%和85mW。 Herein,a 190-GHz frequency doubler with a high output power is designed and realized using a balanced double-frequency construction based on the anti-series gallium arsenide planar Schottky varactors.A method that combines a three-dimensional electromagnetic field and nonlinear harmonic balance is employed to conduct a simulation.The simulation results demonstrate that the proposed frequency doubler has been effectively fabricated, assembled,and tested.The frequency-doubling efficiency of the proposed doubler can reach more than 8%in the output frequency range of 182-196GHz.Moreover,at an output frequency of 187GHz,the frequency-doubling efficiency and the output power can reach 15.4%and 85mW,respectively.
作者 徐鹏 杨大宝 张立森 梁士雄 宋旭波 顾国栋 吕元杰 冯志红 Xu Peng;Yang Dabao;Zhang Lisen;Liang Shixiong;Song Xubo;Gu Guodong;LüYuanjie;Feng Zhihong(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang,Hebei 050051,China;National Key Laboratory of ASIC,Shijiazhuang,Hebei 050051,China)
出处 《中国激光》 EI CAS CSCD 北大核心 2019年第6期227-230,共4页 Chinese Journal of Lasers
关键词 太赫兹 二倍频 肖特基二极管 大功率 Terahertz frequency doubler Schottky varactors high power
  • 相关文献

参考文献7

二级参考文献34

  • 1Eisele H, Haddad G I. High-performance InP Gunn devices for fundamental-mode operation in D-band (110-170GHz) [ J ]. IEEE Transaction on Microwave Wireless Component Letters, 1995, 5(11) : 385 -387.
  • 2Eisele H, Haddad G I. Two-terminal millimeter-wave sources [ J ]. IEEE Transaction on Microwave Theory and Techniques, 1998, 46(6): 739-746.
  • 3Eisele H, Haddad G I. Potential and capabilities of two-ter- minal devices as millimeter and submillimeter-wave funda- mental sources [ C ]. IEEE MTT-S International Microwave Sympsoium Digest, 1999 : 933 - 936.
  • 4Bangert A, Schlechtweg M, Lang M, et al. W-band MMIC VCO with a large tuning range using a pseudomorphic HFET [ C ]. IEEE MTT-S International Microwave Sympsoium Di- gest, 1996 : 525 - 528.
  • 5Uchida K, Matsuura H, Yakihara T, et al. A series of In- GaP/InGaAs HBT oscillators up to D-Band [ J ]. IEEE Transactiorr on .Microwave Theory and Techniques, 2001,49 (5) : 858 -865.
  • 6Winkler W, Borngraber J. LC-oseillator for 94 GHz auto- motive radar system fabricated in SiGe: C BiCMOS technol- ogy [ C ]. Gallium Arsenide applications symposium, 2004: 45 - 46.
  • 7Campos-Roca Y, SchwSrer C, Leuther A, et al. G-Band metamorphic HEMT-based frequency multipliers [ J ]. 1EEE Transaction on Microwave Theory and Techniques, 2006, 4 (7) : 2983 - 2992.
  • 8Cao C H, Kenneth K O. A 140-GHz fundamental mode voltage-controlled oscillator in 90-nm CMOS tehnology [ J ]. IEEE Transaction on Wireless Components Letters, 2006, 16 (10) : 555 -557.
  • 9Nicolson S T, Yau K H K, Chevalier P, et al. Design and scaling of W-band SiGe BiCMOS VCOs [ J ]. IEEE Journal of solid-state circuits, 2007, 42(9) : 1821 - 1833.
  • 10Tuovinen J, Erickson N R. Analysis of a 170-GHz fre- quency doubler with an array of planar diodes [ J ]. IEEE Transaction on Microwave Theory Techniques, 1995, 43 4) : 962 - 968.

共引文献65

同被引文献12

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部