摘要
针对微系统小型化集成对高性能成膜基板需求,研究了基于LTCC基板的BCB/Cu薄膜多层互连关键技术及过程控制要求。提出一种高可靠"T"型界面互连方式的薄膜磁控溅射Cr/Cu/Cr和Cr/Pd/Au复合膜层结构及其制备方法。研究了LTCC基板收缩率偏差、LTCC-薄膜界面缺陷及粗糙度、BCB介质膜固化应力、介质膜金属化的应力等因素对厚薄膜混合基板质量的影响。制备的12层厚薄膜混合基板(10层LTCC基板,2层薄膜布线) 60片,100%全部通过GJB2438 C.2.7成膜基片评价考核要求,相比LTCC基板,布线密度提高4倍,尺寸缩小40%。
Considering the requirements of Microsystems miniaturization integration for high-performance film-forming substrates, the key technologies of multilayer BCB/Cu thin film interconnection based on LTCC substrates and the related process controls were studied. A high reliability "T" interface interconnection method for thin film magnetron sputtering Cr/Cu/Cr and Cr/Pd/Au composite membrane structure and its preparation method were proposed. The effects of LTCC substrate shrinkage deviation, the interface defect and roughness of LTCC-thin film, the curing stress of BCB dielectric membrane and the stress of metallization of dielectric membrane on the quality of thick thin film hybrid substrate were studied. The prepared 12-layer thick thin film mixed substrate(10 layers LTCC substrate, 2 layers of thin film wiring) 60 pieces, all passed the GJB2438 C. 2.7 film substrate evaluation standard. Compared to the LTCC substrate, the wiring density is increased by 4 times, size reduced by 40%.
作者
陈靖
丁蕾
陈瑫
戴洲
沐方清
王立春
赵涛
CHEN Jing;DING Lei;CHEN Tao;DAI Zhou;MU Fangqing;WANG Lichun;ZHAO Tao(Shanghai Institute of Aerospace Electronic Technology,Shanghai,201109,CHN;The 55th Research Institute of China Electronics Technology Group Corporation,Nanjing,210016,CHN;The 43th Research Institute of China Electronics Technology Group Corporation,Hefei,230022,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2019年第3期226-234,共9页
Research & Progress of SSE
基金
国家重大科技专项资助项目(2013ZX01020007)
关键词
微系统
低温共烧陶瓷
薄膜多层互连
苯并环丁烯
界面缺陷
低应力控制
microsystems
low temperature co-fired ceramics(LTCC)
thin film multilayer interconnection
BCB
interface defects
low stress control
