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Storage and transfer of optical excitation energy in GaInP epilayer:Photoluminescence signatures

Storage and transfer of optical excitation energy in GaInP epilayer:Photoluminescence signatures
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摘要 GaInP alloy could be the most trusted key material for fabricating super-high-efficiency single-and multijunction solar cells, especially for space applications. The storage and transfer of optical excitation energy in this key alloy is thus a key subject of the energy conversion from optical to electrical. In this article we present a study of the subject through investigating photoluminescence(PL) degradation in the GaInP epilayer at 4 K under the continuous optical excitations of ultraviolet(UV) 325 nm, visible 488.0 and 514.5 nm lasers. It is found that the decline of PL intensity with the irradiation time may be represented by I(t)/I0=(1 + tτ-1)-1+C, where I0 is the luminescence intensity at the beginning of irradiation, a time constant, and C a background. Moreover, the PL degradation degree reduces with increasing the excitation wavelength. In addition, some red shift of the PL peak is observed accompanying with the intensity decline under the UV laser excitation. These PL signatures indicate that the localized carriers within the local atomic ordering domains play a major role in the storage and transfer of the excitation energy via photon recycling processes. GaInP alloy could be the most trusted key material for fabricating super-high-efficiency single-and multijunction solar cells, especially for space applications. The storage and transfer of optical excitation energy in this key alloy is thus a key subject of the energy conversion from optical to electrical. In this article we present a study of the subject through investigating photoluminescence(PL) degradation in the GaInP epilayer at 4 K under the continuous optical excitations of ultraviolet(UV) 325 nm, visible 488.0 and 514.5 nm lasers. It is found that the decline of PL intensity with the irradiation time may be represented by I(t)/I0=(1 + tτ-1)-1+C, where I0 is the luminescence intensity at the beginning of irradiation, a time constant, and C a background. Moreover, the PL degradation degree reduces with increasing the excitation wavelength. In addition, some red shift of the PL peak is observed accompanying with the intensity decline under the UV laser excitation. These PL signatures indicate that the localized carriers within the local atomic ordering domains play a major role in the storage and transfer of the excitation energy via photon recycling processes.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2019年第7期1364-1367,共4页 材料科学技术(英文版)
基金 supported by the National Natural Science Foundation of China (Grant No. 11374247) in part by a grant from the University Grants Committee Areas of Excellence Scheme of the Hong Kong Special Administrative Region, China (Project No. [AoE/P-03/08])
关键词 GAINP alloy PHOTOLUMINESCENCE Energy transfer PHOTON RECYCLING GaInP alloy Photoluminescence Energy transfer Photon recycling
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