CVD制备Bi2Se3纳米片薄膜及热电性能研究

Study on Thermoelectric Properties of Bi2Se3 Nanoflake Film Prepared by CVD

采用化学气相沉积法(CVD)在云母基片上制备了由高结晶度的纳米片组成的Bi2Se3薄膜。系统研究了基片不同温区、沉积时间及补偿Se对薄膜结构、形貌及热电性能的影响。研究结果表明,在加热温度为520℃、加热时间为30min条件下制备出了由三角形纳米片组成的Bi2Se3薄膜,纳米片边长为10μm,薄膜厚度为1.25μm。在室温时,Bi2Se3薄膜的电导率为0.9S/cm,seebeck系数为-77.8μV/K。

Bi2Se3 nanofilm was prepared by chemical vapor deposition(CVD)on mica substrate.Influence of different substrate temperatures,deposition duration and Se compensation on the structure,morphology and thermoelectric properties have been systematically explored.The research results show that upon the experimental parameters of heating temperature of 520 ℃ and the heating time of 30 min,high crystalized Bi2Se3 film of 1.25μm in thickness,composed of triangle nanoflake with side length of 10μm,has been successfully fabricated.At room temperature,the prepared Bi2Se3 film has a conductivity of 0.9S/cm and a seebeck coefficient of -77.8μV/K.