用于在片测试系统整体校准的电阻标准件

Resistance standard parts for calibration of on-wafer test system

为解决在片测试系统中1~1000Ω电阻无法进行整体校准问题,通过采用GaAs材料作为衬底,利用半导体工艺中薄膜溅射法,使用轰击离子Ar+与靶材作用形成反应层,激发出的溅射原子NiCr打至GaAs表面,制作薄膜电阻.采用方块电阻为50Ω/块,通过调节长与宽的比值,研制出1~1000Ω电阻标准件.为消除电阻测量过程中芯片内部回路引线的影响,研制出相对应的短路器.通过组建具有温度控制系统的定标装置,在-40~100℃温度下对标准件进行定标,定标结果表明电阻标准件的阻值与温度具有良好的线性关系,短期重复性RSD优于0.05%,年稳定性RSD优于0.1%,可以有效解决现有在片测试系统低值电阻参数的整体校准问题.

Resistance standard parts were developed in order to solve the problem that the resistance parameter of on-wafer test system can not to be calibrated in range of 1~1000 Ω. The standard parts were fabricated by thin-film sputtering method, which build thin-film resistor on GaAs substrate. The thin-film resistor was made by NiCr. Reaction layers were formed by Ar+ ion-bombardment, and the sputtered Ni and Cr atoms hit the GaAs surface. The standard parts in range of 1~1 000 Ω were developed, using square resistance of 50 Ω, by adjusting the ratio of length to width. Considering that the wire in chip internal loop could influence the resistance measurement, short devices were developed. A calibrating system with temperature control function was established, which could calibrate the standard parts between -40-100 ℃. The calibration results show good linearity relationship between standards resistance value and temperature. The short-term repeatability RSD of the standards was better than 0.05%, while annual stability RSD was better than 0.1%. The resistance standards could carry out effective calibration of resistance parameter for on-wafer test systems.