摘要
为获得高功率的太赫兹共振隧穿器件,优化设计了AlAs/InGaAs/AlAs共振遂穿二极管材料结构,在国内首次采用MOCVD设备在半绝缘InP单晶片上生长了RTD外延材料。利用接触光刻工艺和空气桥搭接技术,制作了InP基共振遂穿二极管器件。并在室温下测试了器件的电学特性:峰值电流密度>400kA/cm2,峰谷电流比(PVCR)>2.4。
AlAs/InGaAs/AlAs resonant tunneling materials was optimized, and terahertz resonant tunneling diodes grown by MOCVD is first fabricated. The epitaxial layers of the RTD were grown on semi-insulating InP substrate. InP-based RTD were fabricated by using contact lithography and air bridge technology.The electrical characteristics of the device were tested at room temperature. The peak current density of our RTD exceeded 400 kA/cm2, and the peak to valley current ratio of our RTD was 2.4.
作者
车相辉
梁士雄
张立森
顾国栋
郝文嘉
杨大宝
陈宏泰
冯志红
Che Xianghui;Liang Shixiong;Zhang Lisen;Gu Guodong;Hao Wenjia;Yang Dabao;Chen Hongtai;Feng Zhihong(National Key Laboratory of ASIC,The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
出处
《电子技术应用》
2019年第8期32-33,39,共3页
Application of Electronic Technique
关键词
共振隧穿二极管
峰值电流密度
峰谷电流比
resonant tunneling diodes
peak current density
peak to valley current ratio
