阻变存储器阻变层材料专利技术综述

Summary of Patented Technology for Resistive Random Access Memory Resistive Layer Materials

阻变存储器是最具潜力的下一代非易失性存储器之一。本文从专利角度分析了阻变存储器阻变层材料相关专利申请的基本状况,分别对金属氧化物、固态电解质、有机物三种重要阻变层材料技术分支的重点专利进行分析,对各分支的技术内容进行详细梳理,分析其技术演进趋势,探索阻变存储器阻变层材料技术未来的发展方向。

Resistive random access memory is one of the most promising next-generation non-volatile memories. This paper analyzed the basic status of patent applications related to resistive memory resistive layer materials from the perspective of patents.The key patents of several important resistive layer material technologies of metal oxides, solid electrolytes and organic materials were analyzed respectively.The technical contents of each branch were analyzed in detail,and the technological evolution trend was analyzed to explore the resistance memory technology,and the future development direction of resistance layer material technology of resistance memory was explored.