ZnO陷光结构材料的制备及其太阳能电池性能的研究

Preparation of ZnO Light Trapping Materials and their Performance in Solar Cells

采用一步低温水溶液法在未制绒的单晶硅材料表面制备Zn O纳米棒阵列陷光结构材料,通过调控生长温度,对纳米棒阵列参数进行调控.利用扫描电子显微镜对不同条件下制备的Zn O纳米棒阵列材料的形貌进行表征,探究生长温度对阵列参数的影响.采用X射线衍射仪、荧光分光光度计、紫外-可见-近红外光谱仪对Zn O纳米棒阵列的晶体结构及光学特性进行分析.结果表明:低温水溶液法制备的Zn O纳米棒阵列结构具有较好的晶体品质、较高的透过率及较好的陷光效果.与2种材料(未制绒的裸硅片、仅有Si Nx减反射层的硅片)的表面相比,陷光结构硅的表面反射率有较大幅度的降低.将该陷光结构材料应用于未制绒且镀有Si Nx减反射层的单晶硅太阳能电池,与裸硅表面材料的太阳能电池相比,该电池的短路电流密度及转换效率分别提高了30.19%和33.87%.该陷光结构材料具有较好的陷光效果,且易于通过调控生长条件对其陷光效果进行优化.

The one-step low temperature aqueous solution method was used to prepare the ZnO nanorod array light trapping structure on the surface of untextured single crystal silicon solar cells,and the nanorods were regulated by adjusting the growth temperature.The morphologies of ZnO nanorod arrays were analyzed by scanning electron microscopy to investigate the effect of growth temperature on the array parameters.X-ray diffraction,fluorescence spectrophotometer and UV-Vis-NIR spectrophotometer were used to characterize the crystal structure and optical properties of ZnO nanorod arrays.The results show that the ZnO nanorod arrays prepared with the low temperature aqueous solution method have good crystal quality,high transmittance and low reflectance.Compared with the two samples(untextured bare silicon and silicon with only SiN x antireflection layer),the surface reflectance of silicon with ZnO light trapping structure is greatly reduced.The short-circuit current density and conversion efficiency of the solar cell with this light trapping structure show 30.19%and 33.87%enhancements compared to that without any treatments.The light trapping structure has good antireflection properties and the light confinement effect is easy to be optimized by regulating its growth conditions.