Li、Mn掺杂对MgCoNiCuZnO5导电性能的影响

Effect of Li and Mn Doping on the Conductivity of MgCoNiCuZnO5

分别以Li2CO3和MnO为Li源和Mn源,采用高温固相烧结的方法,合成了Li、Mn掺杂的MgCoNiCuZnO5高熵金属氧化物(High-entropy oxides,HEOx)材料(Mg,Co,Ni,Cu,Zn)0.95Li0.05O0.975和(Mg,Co,Ni,Cu,Zn)0.95Mn0.05O。并与未掺杂的HEOx进行对比,研究了Li和Mn两种不同金属元素对HEOx材料的相结构和导电性能的影响。交流阻抗的研究结果表明,Li、Mn掺杂后HEOx导电性明显提高,同时,紫外-可见-近红外吸收光谱表明三种材料都表现出半导体特性,其带隙宽度为1.2~1.7eV,并且Li、Mn掺杂后HEOx的直接带隙变小,Li-HEOx为1.23eV,Mn-HEOx为1.38eV。

Li and Mn doped MgCoNiCuZnO5 high-entropy oxides (HEOx) materials (Mg,Co,Ni,Cu,Zn) 0.95 Li 0.05 O 0.975 and (Mg,Co,Ni,Cu,Zn) 0.95 Mn 0.05 O were synthesized by high temperature solid state sintering using Li 2CO 3 and MnO as Li and Mn sources,respectively.Compared with undoped HEOx,the effects of two different metal elements,Li and Mn,on the phase structure and electrical conductivity of HEOx materials were studied.The results of AC impedance study show that the conductivity of HEOx doped with Li and Mn is significantly improved.The UV-vis-NIR absorption spectra show that all three materials exhibit semiconductive properties,the band gap width is between 1.2 eV and 1.7 eV,the direct band gap of HEOx doped with Li and Mn decreases,and that of the Li-HE Ox is 1.23 eV and that of Mn-HEOx is 1.38 eV.