摘要
Topological insulators (TIs) host robust edge or surface states protected by time-reversal symmetry (TRS), which makes them prime candidates for applications in spintronic devices. A promising avenue of research for the development of functional TI devices has involved doping of three-dimensional (3D) TI thin film and bulk materials with magnetic elements. This approach aims to break the TRS and open a surface band gap near the Dirac point. Utilizing this gapped surface state allows for a wide range of novel physical effects to be observed, paving a way for applications in spintronics and quantum computation. This review focuses on the research of 3D TIs doped with manganese (Mn). We summarize major progress in the study of Mn doped chalcogenide TIs, including Bi2Se3, Bi2Te3, and Bi2(Te,Se)3. The transport properties, in particular the anomalous Hall effect, of the Mn-doped Bi2Se3 are discussed in detail. Finally, we conclude with future prospects and challenges in further studies of Mn doped TIs.
Topological insulators（TIs）host robust edge or surface states protected by time-reversal symmetry（TRS）,which makes them prime candidates for applications in spintronic devices.A promising avenue of research for the development of functional TI devices has involved doping of three-dimensional（3D）TI thin film and bulk materials with magnetic elements.This approach aims to break the TRS and open a surface band gap near the Dirac point.Utilizing this gapped surface state allows for a wide range of novel physical effects to be observed,paving a way for applications in spintronics and quantum computation.This review focuses on the research of 3D TIs doped with manganese（Mn）.We summarize major progress in the study of Mn doped chalcogenide TIs,including Bi2Se3,Bi2Te3,and Bi2（Te,Se）3.The transport properties,in particular the anomalous Hall effect,of the Mn-doped Bi2Se3 are discussed in detail.Finally,we conclude with future prospects and challenges in further studies of Mn doped TIs.
基金
supported by the National Key Research and Development Program (Project No. 2016YFA0300600)
the National Science, Foundation of China (Projects No. 11604374 and No. 61425015)
the National Basic Research Program of China (Project No. 2015CB921102)
the Strategic Priority Research Program of Chinese Academy of Sciences (Project No. XDB28000000)
